Semiconductor inspection apparatus, electrical characteristic inspection apparatus and electrical characteristic inspection method

Abstract

This invention improves the sensitivity of determining the normality / defect of an evaluation element having a main component as the inspection object and a secondary component electrically connected to the main component. According to this disclosure, the brightness of the evaluation element image in a sample image obtained by scanning a pulsed charged particle beam under specific irradiation conditions and specific intermittent conditions is analyzed. This brightness varies depending on the irradiation or intermittent conditions of the pulsed charged particle beam, and a first characteristic and a second characteristic are extracted from these variations. Which of the first and second characteristic values ​​is related to the electrical characteristics of the main component is determined, and the normality / defect of the evaluation element is determined based on either the first characteristic value or the second characteristic value that is determined to be related to the electrical characteristics of the main component.

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