Plasma treatment apparatus and plasma treatment method

Abstract

The plasma processing apparatus disclosed in this invention includes a chamber, a plasma generation section, a substrate support section, an upper assembly, a gas supply section, and a control circuit. The upper assembly includes an upper electrode, an insulating ring, and a conductive ring. The upper electrode has a plurality of first air holes opening into the plasma processing space within the chamber and is disposed above the substrate support section. The insulating ring surrounds the upper electrode. The conductive ring has a plurality of second air holes, surrounds the insulating ring, and is disposed above the space between the substrate support section and the sidewall of the chamber. The gas supply section is configured to supply gas to the plurality of first air holes and / or the plurality of second air holes. The control circuit controls the gas supply section and the plasma generation section to generate plasma from the pre-coated gas within the chamber, thereby forming a pre-coated film.

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