Combined thermal and plasma assisted atomic layer deposition

Abstract

A plasma coil assembly including a ring-shaped body, an RF electrode positioned within the ring-shaped body, and a dielectric top plate positioned within the ring-shaped body. A semiconductor manufacturing processing chamber including a processing chamber body, a gas distribution assembly, a substrate support, and the plasma coil assembly. A method of selectively etching a substrate surface including forming a process gas, exposing the substrate surface to the process gas to form activated fluorine-containing species, and sublimating the activated fluorine-containing species. A method of etching a substrate surface including exposing the substrate surface to a fluorine-containing plasma and applying a bias voltage to the substrate surface, the fluorine-containing plasma generated by the plasma coil assembly. A method of etching a substrate surface including exposing the substrate surface to an inductively coupled plasma and applying a bias voltage to the substrate surface, the inductively coupled plasma generated by the plasma coil assembly.

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