Plasma treatment device and method for controlling the source frequency of high-frequency power.

Abstract

The plasma processing apparatus disclosed in this invention includes a chamber, a substrate support, a high-frequency power supply, and a bias power supply. The high-frequency power supply generates source high-frequency electricity to generate plasma within the chamber. The bias power supply applies bias energy pulses to bias electrodes during each of a plurality of pulse periods. The high-frequency power supply sets the source frequency of the source high-frequency electricity for each of a plurality of phase periods within each of the plurality of overlapping periods based on the variation in the degree of reflection of the source high-frequency electricity, wherein the plurality of overlapping periods overlap with the plurality of pulse periods. The degree of reflection is determined by using different source frequencies during the same phase periods within two or more preceding overlapping periods.

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