Plasma processing apparatus, substrate support and power feed

Abstract

A disclosed plasma processing apparatus is provided with a chamber, an electrostatic chuck, a first feed line, and a second feed line. The electrostatic chuck includes a first region on which a substrate is placed and a second region on which an edge ring is placed. The first region includes a first electrode provided therein. The second region including a second electrode provided therein. The first feed line connects the first electrode and a bias power supply generating a pulse of a voltage applied to the first electrode to each other. The second feed line connects the second electrode and the bias power supply or another bias power supply generating a pulse of the voltage applied to the second electrode to each other. The second feed line includes one or more sockets and one or more feed pins. The one or more feed pins have flexibility in a radial direction thereof and are fitted into the one or more sockets.

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