Modulator-integrated semiconductor laser element and method for manufacturing modulator-integrated semiconductor laser element

TW202632822APending Publication Date: 2026-08-01MITSUBISHI ELECTRIC CORP
0 Cites 0 Cited by

Patent Information

Application Number
TW115102494
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Filing Date
2026-01-22
Publication Date
2026-08-01
Patent Text Reader

Abstract

The modulator-integrated semiconductor laser element (100) disclosed herein is characterized in that: a semiconductor laser portion (110) having at least an active layer (116), a separation portion (120) having at least a semi-insulating layer (128) and an optical waveguide layer (126), and a modulator portion (130) having at least an optical insulating layer (135) are integrated on the same semi-insulating substrate, and the interface between the active layer (116) and the optical waveguide layer (126) is separated from the side of the semi-insulating layer (128) facing the semiconductor laser portion (110) in the optical waveguide direction, and the interface between the optical waveguide layer (126) and the light absorption layer (136) is separated from the side of the semi-insulating layer (128) facing the modulator portion (130) in the optical waveguide direction.
Need to check novelty before this filing date? Find Prior Art