Radio frequency control circuits, radio frequency power supplies and their control methods, semiconductor process equipment

Abstract

This application provides an RF control circuit, method, RF power supply, and semiconductor process equipment, applicable to the field of semiconductor technology. The circuit includes a first control circuit, a second control circuit, a signal conversion circuit, and a DC power supply. The first control circuit outputs a first target control quantity and a second target control quantity based on a forward power setpoint and a forward power feedback value. The signal conversion circuit generates a pulse drive signal based on the first target control quantity and outputs it to a power amplifier circuit. The second control circuit outputs a third target control quantity based on the control quantity deviation between the first target control quantity and a control quantity threshold. The DC power supply adjusts the DC voltage signal output to the power amplifier circuit based on the third target control quantity. This application provides two RF power adjustment methods, offering more adjustment options. The response time for adjusting the duty cycle of the pulse drive signal is much shorter than the response time for adjusting the DC voltage. The combination of the two adjustment methods can effectively improve the adjustment efficiency of the RF power supply.

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