Semiconductor device comprising back pattern

Abstract

A semiconductor device includes memory cells on a front surface of a substrate, a first back pattern on a back surface of the substrate, and a second back pattern on the back surface of the substrate. The first back pattern includes first ground lines arranged in a first direction and extending in a second direction intersecting the first direction, and power lines extending in the second direction, where the first ground lines and the power lines are arranged alternately in the first direction, and the second back pattern includes back word lines arranged in the second direction and extending in the first direction.

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