Semiconductor device and methods of formation

Abstract

Memory cell structures of a memory array are formed using materials and processes that are compatible with complementary metal-oxide-semiconductor (CMOS) integrated circuits that have been formed on a semiconductor device. In particular, the transistor structures of the memory cell structures are formed to include oxide-semiconductor channel layers as opposed to semiconductor channel layers. The oxide-semiconductor channel layers may be formed by lower-temperature processes (e.g., chemical vapor deposition (CVD)) relative to semiconductor channel layers (e.g., epitaxial growth). Thus, the formation of the oxide-semiconductor channel layers is less likely to degrade and / or damage the layers and / or structures of the CMOS integrated circuits of the semiconductor device. In this way, the semiconductor device may be formed monolithically, meaning the memory array may be formed above the device layer of the semiconductor device in which the CMOS integrated circuits were formed.

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