Semiconductor structure and method of manufacturing the same
TW202633072APending Publication Date: 2026-08-01NAN YA TECH
View PDF 0 Cites 0 Cited by
Patent Information
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- NAN YA TECH
- Filing Date
- 2025-05-02
- Publication Date
- 2026-08-01
Smart Images

Figure TWG2TA001070100_001 
Figure TWG2TA001070100_002 
Figure TWG2TA001070100_003
Abstract
Embodiments of this disclosure provide a semiconductor structure. The semiconductor structure includes a capacitor over a substrate, a conductive cell on the capacitor, a vertical transistor on the conductive cell, a first oxide layer surrounding a lower portion of the vertical transistor, a first conductive layer surrounding a middle portion of the vertical transistor, and a second oxide layer surrounding an upper portion of the vertical transistor.
Need to check novelty before this filing date? Find Prior Art