Semiconductor structure and method of manufacturing the same

TW202633072APending Publication Date: 2026-08-01NAN YA TECH
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Patent Information

Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
NAN YA TECH
Filing Date
2025-05-02
Publication Date
2026-08-01

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    Figure TWG2TA001070100_003
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Abstract

Embodiments of this disclosure provide a semiconductor structure. The semiconductor structure includes a capacitor over a substrate, a conductive cell on the capacitor, a vertical transistor on the conductive cell, a first oxide layer surrounding a lower portion of the vertical transistor, a first conductive layer surrounding a middle portion of the vertical transistor, and a second oxide layer surrounding an upper portion of the vertical transistor.
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