Doped multi-layer structures for stack uniformity in devices, and related methods and apparatus

Abstract

Embodiments of the present disclosure generally relate to epitaxial processes and materials, and more specifically, epitaxial processes for preparing materials, layers, stacks, and devices. In one or more embodiments, a device includes a multi-layer structure disposed on a substrate. The multi-layer structure includes a plurality of doped silicon-germanium (SiGe) layers. The doped SiGe layers respectively include a dopant having a concentration in a range from about

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