Semiconductor device and manufacturing method thereof

Abstract

This application discloses a semiconductor device and manufacturing method thereof, and a storage system. The semiconductor device includes a transistor array, and the transistor array includes a plurality of first gate structures and second gate structures that extend in a first direction and that are alternately spaced in a second direction, the second direction intersecting the first direction. The first gate structure includes a first gate line and a second gate line, as well as a first isolation structure located between the first gate line and the second gate line. The second gate structure includes a third gate line and a fourth gate line, as well as a second isolation structure located between the third gate line and the fourth gate line. Two adjacent, in the second direction, first isolation structures and second isolation structures are arranged opposite to each other, and both the first isolation structure and the second isolation structure are located at an end of the first direction. The yield and reliability of semiconductor devices are improved in this application.

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