Semiconductor memory devices and their control methods

Abstract

The present invention provides a semiconductor memory device that operates appropriately. The semiconductor memory device includes: a plurality of semiconductor layers, which are stacked along a stacking direction and extend in a first direction; a plurality of conductive layers, which extend in a second direction and are connected to the ends of the plurality of semiconductor layers in the first direction; a plurality of via electrodes, which are arranged along the side surfaces of the plurality of semiconductor layers in the second direction in the first direction and whose diameter increases from a first position to a second position in the stacking direction; and a plurality of charge storage layers, which are disposed between the plurality of semiconductor layers and the plurality of via electrodes. Furthermore, at the first point of programming, a first voltage or a second voltage greater than the first voltage is supplied to a plurality of first conductive layers disposed within the range from the first position to the third position in the stacking direction, and a third voltage greater than the first voltage and less than the second voltage, or a fourth voltage greater than the third voltage, is supplied to a plurality of second conductive layers disposed within the range from the second position to the fourth position in the stacking direction. In this state, a programming voltage is supplied to a via electrode.

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