Semiconductor device

Abstract

Provided is semiconductor device including a bit line extending in a first direction, semiconductor patterns including a first material spaced apart from each other in the first direction, and a first semiconductor pattern including a first end and a second end in a second direction, , connected to the bit line, a word line extending in a third direction and positioned on a first side of the semiconductor pattern in the first direction, a data storage pattern including a first electrode connected to the second end of the semiconductor pattern, a second electrode spaced apart from the first electrode, a dielectric layer between the first and second electrodes, and an etch stop layer between the word line and the first electrode and in contact with the semiconductor pattern, and including a second material different from that of the semiconductor pattern.

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