Semiconductor devices
TW202633085APending Publication Date: 2026-08-01KIOXIA CORP
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Patent Information
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- KIOXIA CORP
- Filing Date
- 2021-02-01
- Publication Date
- 2026-08-01
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Figure TWG2TA001071873_001
Abstract
According to one embodiment, a semiconductor device includes: a substrate; and a multilayer film comprising a plurality of electrode layers and a plurality of insulating layers alternately disposed above the substrate. The device further includes: a first semiconductor layer disposed within the multilayer film; and a second semiconductor layer disposed within the multilayer film on the first semiconductor layer, and comprising a single-crystal semiconductor layer. The device further includes a wiring layer disposed on the multilayer film and the second semiconductor layer, and electrically connected to the second semiconductor layer.
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