Memory device

Abstract

This invention improves the compactness of memory devices. One embodiment of the memory device includes: a first conductive post and a second conductive post, each extending along a first direction and arranged along a second direction intersecting the first direction; a first semiconductor layer and a second semiconductor layer, each at a first position in the first direction and extending along the second direction, with the first conductive post and the second conductive post separated from each other in a third direction intersecting the first and second directions; a first insulating film, at a first position disposed between the first semiconductor layer and the second semiconductor layer and between the first conductive post and the second conductive post, and having a first portion along a circle centered on the first conductive post on a surface opposite to the first and second semiconductor layers; a first charge storage film, at a first position disposed between the first conductive post and the first semiconductor layer; and a second charge storage film, at a first position disposed between the first conductive post and the second semiconductor layer, and separated from the first charge storage film.

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