Semiconductor structure

TW202633088AInactive Publication Date: 2026-08-01POWERCHIP SEMICON MFG CORP
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Patent Information

Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
POWERCHIP SEMICON MFG CORP
Filing Date
2025-01-21
Publication Date
2026-08-01
Estimated Expiration
Not applicable · inactive patent

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Abstract

A semiconductor structure including a first electrode, a second electrode, a ferroelectric material layer, and a first dielectric layer is provided. The second electrode is located on the first electrode. The ferroelectric material layer and the first dielectric layer are located between the first electrode and the second electrode. The first dielectric layer is in direct contact with the ferroelectric material layer. The material of the ferroelectric material layer is hafnium zirconium oxide. The material of the first dielectric layer is barium titanate or barium strontium titanate.
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