Semiconductor integrated circuits

Abstract

The objective of this invention is to significantly improve the information write and erase characteristics in a semiconductor integrated circuit containing non-volatile memory. The semiconductor integrated circuit of this invention includes: a first insulated-gate field-effect transistor having a first floating gate electrode in an electrically floating state and a first channel conductivity type; a second insulated-gate field-effect transistor having a second floating gate electrode integrally formed with the first floating gate electrode and in an electrically floating state, and a second channel conductivity type opposite to the first channel conductivity type; and a first capacitor element electrically connected in series with the first and second floating gate electrodes, comprising a ferroelectric insulator.

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