Multilayer structures, magnetic memory elements and magnetization control methods

Abstract

This invention provides a novel multilayer structure comprising a substrate, a ferromagnetic layer, and a ferroelectric layer, wherein the magnetization orientation of the ferromagnetic layer can be controlled to any direction by adjusting the polarization of the ferroelectric layer. Furthermore, this invention provides a magnetic memory element comprising the above-described multilayer structure and a magnetization control method for the multilayer structure. The multilayer structure includes a substrate, a ferromagnetic layer disposed on the substrate, and a ferroelectric layer laminated with the ferromagnetic layer and having a polarization direction component in the lamination direction. Moreover, the magnetization orientation of the ferromagnetic layer can be changed by adjusting the polarization of the ferroelectric layer.

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