Semiconductor devices having capacitor structures

Abstract

A semiconductor device includes: a substrate including an active region; transistors including a gate structure;; a substrate insulating layer; a plurality of capping insulating layers covering the substrate insulating layer and having a flat upper surface; and a capacitor disposed within a capacitor region and penetrating through the plurality of capping insulating layers, and the capacitor includes: a capacitor base extending in a first direction and a second direction,, and having the same plurality of stacked layers as the gate structure; first capacitor electrodes having a plate shape extending in the second direction and a third direction;and second capacitor electrodes having the plate shape, and disposed alternately with the first capacitor electrodes in the first direction, and lower ends of the second capacitor electrodes penetrate through at least some layers of the capacitor base, and lower ends of the first capacitor electrodes penetrate through a lowermost capping insulating layer.

Images