Semiconductor device

Abstract

A semiconductor device including a Zener diode, includes: an n-type semiconductor substrate; a p-type well region; an n-type diffusion region; and a p-type impurity region. An impurity concentration of the p-type impurity region is higher than an impurity concentration of the p-type well region. The p-type impurity region surrounds at least a part of the n-type diffusion region in plan view. The p-type well region forms a quadrangular shape in plan view. Each corner of the p-type well region is exposed from the p-type impurity region in plan view. A cathode of the Zener diode includes the n-type diffusion region. An anode of the Zener diode includes the p-type well region and the p-type impurity region.

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