Bipolar junction transistor

TW202633099APending Publication Date: 2026-08-01UNITED MICROELECTRONICS CORP
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Patent Information

Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
UNITED MICROELECTRONICS CORP
Filing Date
2024-10-15
Publication Date
2026-08-01

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Abstract

A bipolar junction transistor includes an emitter region, a base region, a collector region and an isolation structure. The base region is disposed adjacent to a first side of the emitter region. The collector region is disposed adjacent to a second side of the emitter region. The isolation structure is disposed between the emitter region and each of the base region and the collector region.
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