Three dimensional bipolar transistor

TW202633100APending Publication Date: 2026-08-01TEXAS INSTRUMENTS INC
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Patent Information

Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Filing Date
2025-10-07
Publication Date
2026-08-01

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Abstract

A semiconductor device includes a base region having a first conductivity type, the base region extending into a top surface of a semiconductor layer, a collector region having an opposite second conductivity type, the collector region extending from the top surface into the semiconductor layer and spaced apart from the base region, and an emitter region having the second conductivity type, the emitter region extending from the top surface into the base region and having first and second faces along a junction between the emitter region and the base region.
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