Insulated gate bipolar superjunction transistor

TW202633101APending Publication Date: 2026-08-01ALPHA & OMEGA SEMICON INT LP
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Patent Information

Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
ALPHA & OMEGA SEMICON INT LP
Filing Date
2026-01-13
Publication Date
2026-08-01

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Abstract

Apparatus and associated methods relate to an insulated gate bipolar superjunction transistor (IGBST). In an illustrative example, a substrate having a predefined insulated gate bipolar transistor (IGBT) section and a metal-oxide-semiconductor field-effect transistor (MOSFET) section is provided. A number of layers of dopant to be implanted on the substrate, for example, is determined to form a superjunction structure across the IGBT section and the MOSFET section. For example, the number of layers may range from
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