Semiconductor structure and method for forming the same

Abstract

A method includes: providing a substrate containing a first plurality of fins of a first polarity type, a second plurality of fins of a second polarity type, and a contiguous gate structure that extends over each of the first plurality of fins and second plurality of fins; and forming a first opening in the contiguous gate structure with a first cut between the first pair of fins of the first polarity type and a second opening in the contiguous gate structure with a second cut between the second pair of fins of the second polarity type via common etching operations; wherein performing the common etching operations includes forming the first opening with a first middle critical dimension (MCD) and the second opening with a second MCD, wherein the first MCD is larger than the second MCD.

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