Semiconductor devices and methods of fabricating the same

Abstract

Provided are semiconductor devices and methods for fabricating such devices. A method includes forming nanosheet channel layers over a semiconductor material; forming a protective liner on each of the nanosheet channel layers; forming fin structures from the nanosheet channel layers and from a portion of the semiconductor material; forming a sacrificial gate over the semiconductor material; performing a thermal anneal process while the protective liners are located on the nanosheet channel layers; removing a portion of a selected fin structure and an overlying portion of the sacrificial gate located over the portion of the selected fin structure to form a trench; forming an insulation structure in the trench; removing a remaining portion of the sacrificial gate to form a gate cavity partially defined by an end wall of the insulation structure; removing the protective liners from the nanosheet channel layers; and forming a metal gate in the cavity.

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