Substrate for the manufacture of a high electron mobility transistor

TW202633110APending Publication Date: 2026-08-01SOITEC SA
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Patent Information

Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
SOITEC SA
Filing Date
2025-10-14
Publication Date
2026-08-01

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Abstract

The present invention relates to a substrate for the manufacture of a high electron mobility transistor (HEMT), successively comprising: ● a single-crystal silicon carrier substrate
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