Semiconductor devices

Abstract

The semiconductor device of the present invention comprises: a first nitride semiconductor layer having a channel layer and a barrier layer, and having a first recess and a second recess; and a second nitride semiconductor layer and a third nitride semiconductor layer, wherein the channel layer has a first surface, the barrier layer has a second surface facing the first surface and a third surface opposite to the second surface, the first recess has a first opening on the third surface, the second recess has a second opening on the third surface, the second nitride semiconductor layer is disposed in the first recess, the third nitride semiconductor layer is disposed in the second recess, the first recess has a first bottom surface separate from the first surface, and the first distance between the first bottom surface and the first surface is 1 nm or more and 20 nm or less.

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