Semiconductor device and method for fabricating the same

Abstract

A semiconductor device and processes for fabricating the same are provided. A semiconductor device includes a dielectric wall; a first semiconductor layer extending in a first direction perpendicular from a first side of the dielectric wall, the first semiconductor layer having a first end that is nearest to the dielectric wall; and a first gate electrode layer including a first gate extension that extends beyond the first end of the first semiconductor layer and is nearer to the first side of the dielectric wall than the first end of the first semiconductor layer.

Images