Semiconductor device and method of manufacturing semiconductor device

Abstract

A semiconductor device (1) comprises: a semiconductor stack (20) having a first nitride semiconductor layer, namely an electron transport layer (22), and a second nitride semiconductor layer, namely an electron supply layer (23), located above the electron transport layer (22); a gate layer (40), which is a p-type third nitride semiconductor layer located above a first region (20a) in the semiconductor stack (20); a source electrode (70S) and a drain electrode (70D) located above a second region (20b) in the semiconductor stack (20); and a gate electrode (70G) located above the third nitride semiconductor layer, namely the gate layer (40), and is a Schottky electrode, wherein the source electrode (70S), the drain electrode (70D), and the gate electrode (70G) comprise a TiAl alloy layer.

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