Field-effect transistor

TW202633121APending Publication Date: 2026-08-01TDK CORP
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Patent Information

Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Filing Date
2025-11-18
Publication Date
2026-08-01

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Patent Text Reader

Abstract

The present invention relates to a field-effect transistor having a fin-type structure, in which current flows in the thickness direction of the substrate and insulation breakdown due to electric field concentration can be suppressed when the transistor is off. The field-effect transistor
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