Semiconductor device

Abstract

A semiconductor device may include an active pattern extending in a first horizontal direction on the top surface of a substrate, a gate electrode on the active pattern and extending in a second horizontal direction, a first source / drain pattern including a lower epitaxial region and an upper epitaxial region, and a first source / drain contact connected to the first source / drain pattern. The active pattern may include a fin-type active pattern. The first source / drain pattern may be connected to the fin-type active pattern. The upper epitaxial region may include an epitaxial recess that may be inwardly recessed from a surface of the fin-type active pattern. The lower epitaxial region may be arranged along an inner wall of the epitaxial recess. The first source / drain contact may be arranged in the epitaxial recess and in a power contact hole passing through the substrate and the fin-type active pattern.

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