Semiconductor device including transistor structure and separation structure

Abstract

A semiconductor device includes a separation structure and a transistor structure on a side surface of the separation structure. The transistor structure includes a first source / drain region, a second source / drain region spaced apart from the first source / drain region, channel layers connected to the first source / drain region and the second source / drain region, the channel layers being spaced apart in a first direction, a gate electrode covering each of the channel layers, a gate dielectric structure between the first source / drain region and the second source / drain region and the gate electrode, between the channel layers and the gate electrode, and between the separation structure and the gate electrode, and a first insulating spacer and a second insulating spacer spaced apart from each other, adjacent to the separation structure, and between the first source / drain region and the second source / drain region.

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