Semiconductor device and fabricating method thereof

Abstract

Embodiments of the present disclosure is a semiconductor device that, includes a first channel region and a second channel region disposed over a semiconductor substrate; a gate structure having a longitudinal axis in a first direction and extending across the first channel and second channel regions, and the gate structure includes an interfacial layer, a gate dielectric layer, and a gate electrode; a first epitaxial feature and a second epitaxial feature interposing the first channel region and the gate structure in a second direction perpendicular to the first direction; and an isolation structure extending between the first and second channel regions. The isolation structure has a first sidewall facing the first channel region, and a portion of the first sidewall between a top of the first channel region and a bottom of the first channel region is covered by the gate dielectric layer and the interfacial layer.

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