Source / drain channel interface with nitrogen-containing oxide

Abstract

An example thin-film transistor includes a source including a body of source material, a drain including a body of drain material, a gate, and a body of semiconductor channel material between the source and the drain. The body of semiconductor channel material includes a metal oxide. The thin-film transistor further includes a source-channel interface between the body of source material and the body of semiconductor channel material. The source-channel interface includes a nitrogen-containing metal oxide. A similar or identical drain-channel interface may be provided. The nitrogen-containing metal oxide may be formed using plasma.

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