Pressure sensor structure and fabrication method thereof
TW202633128APending Publication Date: 2026-08-01VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
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Patent Information
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
- Filing Date
- 2025-01-21
- Publication Date
- 2026-08-01
Smart Images
Figure TWG2TA001069657_001 
Figure TWG2TA001069657_002 
Figure TWG2TA001069657_003
Abstract
A pressure sensor structure includes a semiconductor substrate, a composite membrane, a cavity, a semiconductor resistor and a cap plate. The semiconductor substrate has a first surface opposite to a second surface. The composite membrane is embedded in the semiconductor substrate and located at the first surface. The cavity is disposed in the semiconductor substrate and extended from the second surface to the composite membrane. The semiconductor resistor is disposed on the composite membrane and located directly above the cavity. The cap plate is bonded to the semiconductor substrate to seal the cavity.
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