Semiconductor devices and semiconductor memory devices

Abstract

This invention provides a semiconductor device with excellent transistor characteristics. The semiconductor device of an embodiment includes: a first electrode; a second electrode; a first oxide semiconductor layer disposed between the first electrode and the second electrode; a gate electrode facing the first oxide semiconductor layer and extending along a first direction; a first gate insulating layer disposed between the gate electrode and the first oxide semiconductor layer, surrounding the first oxide semiconductor layer, and comprising at least one element selected from the group consisting of combinations of silicon (Si) and nitrogen (N), titanium (Ti) and oxygen (O), and aluminum (Al) and oxygen (O); and the first insulating layer comprising a first portion and a second portion in a first cross-section perpendicular to a second direction connecting the first electrode and the second electrode and including the gate electrode, wherein a gate electrode is disposed between the first portion and the second portion, the first portion being in contact with the first gate insulating layer, and the second portion being in contact with the gate electrode.

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