Semiconductor device and method for manufacturing the same

Abstract

The semiconductor substrate has a source region, a drain region, a body region between the source region and the drain region, and a drift region between the body region and the drain region. The gate structure is over the body region. The first dielectric layer is over the drift region of the semiconductor substrate and surrounding the gate structure. The second dielectric layer is over the drift region of the semiconductor substrate and in contact with a top surface of the first dielectric layer. The second dielectric layer includes a material different from a material of the first dielectric layer. The contact field plate is over the drift region of the semiconductor substrate and the first dielectric layer. The contact field plate extends through the second dielectric layer and in contact with the top surface of the first dielectric layer.

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