Integrated circuit device

Abstract

An integrated circuit device includes an upper sheet separation wall, a pair of nanosheet stack structures having the upper sheet separation wall therebetween, disposed spaced apart from each other, and each comprising a plurality of nanosheets, a pair of gate electrodes on the pair of nanosheet stack structures, source / drain regions connected to ends of the plurality of nanosheets included in the pair of nanosheet stack structures, a pair of backside via contacts and connected to the pair of source / drain regions, a pair of backside wiring lines connected to ends of the pair of backside via contacts, and a lower sheet separation wall between the pair of backside via contacts and the pair of backside wiring lines, and contacting the upper sheet separation wall.