Two-step oxide trench silicon carbide mosfet

Abstract

Semiconductor devices and processes for manufacturing semiconductors are described. A semiconductor device can include a drift region formed on a Silicon Carbide substrate. The semiconductor device can include a trench that penetrates through a source region and a channel and reaches the drift region. The semiconductor device can include an oxide region lining the trench. The oxide region can include a bottom portion, a lower side portion and an upper side portion. A thickness of the bottom portion and a thickness of the lower side portion can be greater than a thickness of the upper side portion. The semiconductor device can include a gate electrode formed in the trench lined with the oxide region. The semiconductor device can include a shield region in contact with a bottom portion of the trench. A width of the semiconductor region can be less than or equal to a width of the trench.

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