Semiconductor device and forming method thereof

Abstract

A method for forming an integrated circuit includes forming a plurality of stacked channels of a transistor and forming a plurality of interfacial dielectric structures each in contact with one of the channels. The method includes forming a plurality of inner spacers interleaved with the channels. The method includes forming a gate metal wrapped around the channels. After forming the gate metal, each inner spacer is in contact with a respective interfacial dielectric structure positioned between the inner spacer and an adjacent channel of the plurality of channels.

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