Semiconductor structure and methods of forming the same

Abstract

A method includes forming a transistor as a part of a wafer. The transistor includes a semiconductor channel, a gate stack comprising a gate dielectric over the semiconductor channel and a gate electrode over the gate dielectric, and a source / drain region aside of, and joined to, an end of the semiconductor channel. The method further comprises forming a source / drain contact plug over and electrically coupling to the source / drain region, and performing an etching process from a backside of the wafer to form a gate contact opening. The gate dielectric is etched-through, and the gate electrode is exposed to the gate contact opening. A backside gate contact plug is formed in the gate contact opening.

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