Semiconductor devices

Abstract

The purpose of this invention is to provide a semiconductor device with improved withstand voltage. The semiconductor device of this invention includes: a semiconductor substrate having a drift layer, a base region, and a source region; a source electrode; a first trench having a masking gate structure internally and arranged in parallel in a planar view; a second trench having a masking gate structure internally and disposed between adjacent first trenches; and a mesa region. The first trenches, at their ends, are obliquely curved relative to the direction of extension of the first trench in the unit region in a planar view, and the ends of adjacent first trenches are connected to each other, forming a polygonal shape from two adjacent first trenches. The second trench is spaced a certain distance from the connected first trench.

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