Semiconductor devices

Abstract

The semiconductor device include a channel disposed on a substrate and extending in a first direction; a gate structure extending in a second direction, wherein the gate structure surrounds at least a portion of a first end portion in the first direction of the channel; a bit line electrically connected to the channel and extending in a vertical direction along a sidewall in the first direction of the first end portion of the channel; and a capacitor disposed at a sidewall in the first direction of a second end portion of the channel, the second end portion of the channel being an end portion in the first direction of the channel facing the first end portion of the channel, wherein the sidewall in the first direction of the second end portion of the channel includes an upper and a lower sidewalls, and the upper sidewall and the lower sidewall converge to form a V-shaped configuration, with a vertex formed by the upper and the lower sidewalls being oriented toward an interior of the channel.

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