Semiconductor device structure and methods of forming the same

Abstract

Embodiments of the present disclosure provide semiconductor device structures and methods of forming the same. The method includes forming a fin structure, and the fin structure includes a first semiconductor layer disposed over a substrate portion. The method further includes removing a portion of the first semiconductor layer to expose a top surface of the substrate portion, a side surface of the substrate portion, and a side surface of the first semiconductor, forming a first oxide layer on the exposed top surface of the substrate portion, a second oxide layer on the exposed side surface of the substrate portion, and a third oxide layer on the exposed side surface of the first semiconductor layer, and performing a high-pressure cyclic etching process to remove the first oxide layer. The method further includes forming a second semiconductor layer on the top surface of the substrate portion and removing the third oxide layer.

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