Semiconductor device and manufacturing method therefor

Abstract

This application discloses a semiconductor device and a manufacturing method thereof. The semiconductor device includes: a semiconductor layer including a first region and a second region; a first device structure located within the first region and on a surface of the first region; and a second device structure located within the second region and on a surface of the second region. The first device structure is the structure of a device manufactured using BCD process technology, and the second device structure is the structure of a trench power device with a T-shaped gate. This application enables the manufacture, through a relatively simple process flow and at lower cost, of a semiconductor device that combines low specific on-resistance with the advantages of devices manufactured by BCD process technology.

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