Semiconductor structure and fabrication method thereof

Abstract

A semiconductor structure is provided. The semiconductor structure includes a substrate, a first semiconductor film, a second semiconductor film, a first gate structure and a second gate structure. The substrate includes an N-type semiconductor region and a P-type semiconductor region. The first semiconductor film is formed on a flat top surface of the P-type semiconductor region. The second semiconductor film is formed on a rough top surface of the N-type semiconductor region. The first semiconductor film and the second semiconductor film comprise different materials. The first gate structure is disposed on the first semiconductor film. The second gate structure is disposed on the second semiconductor film.

Images