Semiconductor device and methods of forming the same

Abstract

Embodiments of the present disclosure provide semiconductor devices and methods of forming the same. An exemplary semiconductor device of the present disclosure includes a first channel region disposed over a semiconductor substrate; a gate structure disposed over the first channel region; a first source / drain region disposed at a first side of the first channel region; a second source / drain region disposed at a second side of the first channel region; an interlayer dielectric layer disposed over the first channel region, the first source / drain region, and the second source / drain region; a first contact disposed in the interlayer dielectric layer and electrically coupled to the first source / drain region; and a second contact disposed in the semiconductor substrate and electrically coupled to the second source / drain region.

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