Integrated circuit devices

Abstract

An integrated circuit device comprises: a first nanosheet stack; a first source / drain connected to the first nanosheet stack; a first contact on the first source / drain; a second nanosheet stack; a second source / drain connected to the second nanosheet stack; a second contact on the second source / drain; and an insulating layer between the first and second nanosheet stacks, wherein the first contact comprises a first contact body extending in a first direction and a first contact protrusion protruding from the first contact body, the second contact comprises a second contact body extending in the first direction and a second contact protrusion protruding from the second contact body, and the first contact protrusion and the second contact protrusion are spaced apart from each other with the insulating layer therebetween in the first direction and each of the first contact protrusion and the second contact protrusion has an asymmetrical shape in the first direction.

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