Semiconductor device structure and methods of forming the same

Abstract

Embodiments of the present disclosure provide semiconductor device structures and methods of forming the same. The structure includes a source / drain region, a contact etch stop layer disposed over the source / drain region, a first interlayer dielectric (ILD) layer disposed over the contact etch stop layer, an etch stop layer disposed over the contact etch stop layer and the first ILD layer, a second ILD layer disposed over the etch stop layer, a substrate portion disposed below the source / drain region, and an isolation region disposed adjacent the substrate portion. The isolation region includes a first dielectric layer including a first dielectric material and a second dielectric layer disposed on the first dielectric layer. The second dielectric layer includes a second dielectric material different from the first dielectric material. The isolation region further includes a hard mask structure disposed on the first and second dielectric layers.

Images